AP2P028EM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2P028EM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SO8

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AP2P028EM datasheet

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AP2P028EM

AP2P028EM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D D D ESD Diode Protected RDS(ON) 28m D Suit for USB Type-C Application ID -7A G S RoHS Compliant & Halogen-Free HBM ESD 8KV S S SO-8 Description D AP2P028E series are from Advanced Power innovated design and silicon

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AP2P028EM

AP2P053N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achieve th

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AP2P028EM

AP2P053Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m D Surface Mount Device ID3 -5A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achi

 9.3. Size:156K  ape
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AP2P028EM

AP2P052N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to achieve the

MOSTRAR MÁS

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