AP9960GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9960GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO8

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AP9960GM Datasheet (PDF)

..1. Size:180K ape
ap9960gm.pdf

AP9960GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance D2 BVDSS 40VD2D1 Fast Switching Speed RDS(ON) 20mD1 Surface Mount Package ID 7.8AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2AP9960 series are from

0.1. Size:69K ape
ap9960gm-hf.pdf

AP9960GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D2 BVDSS 40VD2D1 Fast Switching Speed RDS(ON) 20mD1 Surface Mount Package ID 7.8AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

7.1. Size:71K ape
ap9960gh ap9960gj.pdf

AP9960GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 40V Low Gate Charge RDS(ON) 16m Fast Switching ID 42A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug

7.2. Size:97K ape
ap9960gh-hf ap9960gj-hf.pdf

AP9960GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Low Gate Charge RDS(ON) 16m Fast Switching Characteristic ID 42AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

7.3. Size:72K ape
ap9960gd.pdf

AP9960GDPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low On-Resistance BVDSS 40VD2D1 Fast Switching Speed D1 RDS(ON) 25m PDIP-8 Package ID 7AG2S2PDIP-8G1S1DescriptionD1D2The Advanced Power MOSFETs from APEC provide thedesigner with the best combinatio

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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