AP2304AGN Todos los transistores

 

AP2304AGN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2304AGN
   Código: NASS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
   Paquete / Cubierta: SOT23

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AP2304AGN Datasheet (PDF)

 ..1. Size:140K  ape
ap2304agn.pdf

AP2304AGN
AP2304AGN

AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDDescriptionAP2304A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl

 0.1. Size:92K  ape
ap2304agn-hf.pdf

AP2304AGN
AP2304AGN

AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremel

 8.1. Size:95K  ape
ap2304gn-hf.pdf

AP2304AGN
AP2304AGN

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V Small package outline RDS(ON) 117mD Surface mount package ID 2.7A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dl

 8.2. Size:140K  ape
ap2304gn.pdf

AP2304AGN
AP2304AGN

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Small package outline RDS(ON) 117m Surface mount package ID 2.7AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo

 8.3. Size:878K  cn vbsemi
ap2304gn.pdf

AP2304AGN
AP2304AGN

AP2304GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

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