AP2304AGN Todos los transistores

 

AP2304AGN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2304AGN
   Código: NASS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.38 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 3 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 62 pF
   Resistencia entre drenaje y fuente RDS(on): 0.117 Ohm
   Paquete / Cubierta: SOT23

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AP2304AGN Datasheet (PDF)

 ..1. Size:140K  ape
ap2304agn.pdf

AP2304AGN
AP2304AGN

AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDDescriptionAP2304A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl

 0.1. Size:92K  ape
ap2304agn-hf.pdf

AP2304AGN
AP2304AGN

AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremel

 8.1. Size:95K  ape
ap2304gn-hf.pdf

AP2304AGN
AP2304AGN

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V Small package outline RDS(ON) 117mD Surface mount package ID 2.7A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dl

 8.2. Size:140K  ape
ap2304gn.pdf

AP2304AGN
AP2304AGN

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Small package outline RDS(ON) 117m Surface mount package ID 2.7AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo

 8.3. Size:878K  cn vbsemi
ap2304gn.pdf

AP2304AGN
AP2304AGN

AP2304GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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