AP2316GN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2316GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2316GN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: SOT23

Búsqueda de reemplazo de AP2316GN MOSFET

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AP2316GN datasheet

..1. Size:180K ape
ap2316gn.pdf pdf_icon

AP2316GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID3 4.7A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

0.1. Size:58K ape
ap2316gn-hf.pdf pdf_icon

AP2316GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistanc

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ap2316.pdf pdf_icon

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ap2310gg-hf.pdf pdf_icon

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

9.2. Size:99K ape
ap2319gn-hf.pdf pdf_icon

AP2319GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90m D Surface Mount Device ID -3.1A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

9.3. Size:57K ape
ap2313gn.pdf pdf_icon

AP2313GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiven

9.4. Size:59K ape
ap2318agen-hf.pdf pdf_icon

AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on

9.5. Size:120K ape
ap2311gn.pdf pdf_icon

AP2311GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

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ap2317gn-hf.pdf pdf_icon

AP2317GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resist

9.7. Size:49K ape
ap2310gk-hf.pdf pdf_icon

AP2310GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC

9.8. Size:125K ape
ap2311gn-hf.pdf pdf_icon

AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

9.9. Size:97K ape
ap2318gen-hf.pdf pdf_icon

AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem

9.10. Size:93K ape
ap2310cgn-hf.pdf pdf_icon

AP2310CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible

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ap2318gen.pdf pdf_icon

AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t

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ap2311gk-hf.pdf pdf_icon

AP2311GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID - 2.4A D RoHS Compliant & Halogen-Free SOT-223 G Description Advanced Power MOSFETs from APEC

9.13. Size:58K ape
ap2310agn-hf.pdf pdf_icon

AP2310AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65V D Small Package Outline RDS(ON) 80m Surface Mount Device ID 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lo

9.14. Size:68K ape
ap2315gen.pdf pdf_icon

AP2315GEN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 1.25 Surface Mount Device ID - 840mA S G SOT-23 Description Advanced Power MOSFETs from APEC provide the designer D with the best combination of fast switching, low on-resistance and cost-effec

9.15. Size:94K ape
ap2310gn-hf.pdf pdf_icon

AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 3A S RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely e

9.16. Size:68K ape
ap2312gn.pdf pdf_icon

AP2312GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50m D Surface mount package ID 4.3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

9.17. Size:68K ape
ap2310gn.pdf pdf_icon

AP2310GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

9.18. Size:146K ape
ap2314gn.pdf pdf_icon

AP2314GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower On-resistance RDS(ON) 75m Surface Mount Package ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on

9.19. Size:57K ape
ap2313gn-hf.pdf pdf_icon

AP2313GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

9.20. Size:95K ape
ap2314gn-hf.pdf pdf_icon

AP2314GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 75m D Surface mount package ID 3.5A RoHS Compliant & Halogen-Free S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista

9.21. Size:149K ape
ap2318ben.pdf pdf_icon

AP2318BEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318B series are from Advanced Power innovated design and silicon G process technology to achiev

9.22. Size:569K allpower
ap2318a.pdf pdf_icon

AP2318A N-Channel Enhancement Mosfet Features 20V,6A R

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ap2310s.pdf pdf_icon

AIIP ER AP2310S DATA SHEET N-Channel p wer MOSFET Descripti n The AP2310S uses advanced trench technol y to provide N low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba e protection or in other switching application. Schematic Diagram General Features 3A Vos =60V o = ,l Ros(ON

9.29. Size:3068K cn vbsemi
ap2311gn.pdf pdf_icon

AP2311GN www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/

9.30. Size:1490K cn vbsemi
ap2310gg.pdf pdf_icon

AP2310GG www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

9.31. Size:1228K cn apm
ap2312ai.pdf pdf_icon

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

9.32. Size:1302K cn apm
ap2312mi.pdf pdf_icon

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

9.33. Size:1157K cn apm
ap2311ai.pdf pdf_icon

AP2311AI -12V P-Channel Enhancement Mode MOSFET Description The AP2311AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-5.8A DS D R

9.34. Size:1715K cn apm
ap2313mi.pdf pdf_icon

AP2313MI -12V P-Channel Enhancement Mode MOSFET Description The AP2313MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-8A DS D R

9.35. Size:1188K cn apm
ap2311mi.pdf pdf_icon

AP2311MI -12V P-Channel Enhancement Mode MOSFET Description The AP2311MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-7.0A DS D R

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