AP2326GN Todos los transistores

 

AP2326GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2326GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

AP2326GN Datasheet (PDF)

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AP2326GN

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2326 series are from Advanced Power innovated design andsilicon process technology to achieve

 0.1. Size:94K  ape
ap2326gn-hf.pdf pdf_icon

AP2326GN

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2326GN

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

 9.2. Size:55K  ape
ap2321gn-hf.pdf pdf_icon

AP2326GN

AP2321GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SM1A06NSF | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | B0210D

 

 
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