AP2326GN Todos los transistores

 

AP2326GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2326GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOT23
 

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AP2326GN datasheet

 ..1. Size:144K  ape
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AP2326GN

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2326 series are from Advanced Power innovated design and silicon process technology to achieve

 0.1. Size:94K  ape
ap2326gn-hf.pdf pdf_icon

AP2326GN

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2326GN

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

 9.2. Size:55K  ape
ap2321gn-hf.pdf pdf_icon

AP2326GN

AP2321GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

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History: AP2311GN

 

 
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