AP2344GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2344GN
Código: MNSS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.38 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 6.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP2344GN
AP2344GN Datasheet (PDF)
ap2344gn.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2344gn-hf.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2344gen-hf.pdf
AP2344GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconGprocess technology to achiev
ap2346gn-hf.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2342gk-hf.pdf
AP2342GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 2S Fast Switching Characteristic ID 590mAD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast swit
ap2346gn.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2340gn-hf.pdf
AP2340GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VD Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID 3.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest
ap2348gn-hf.pdf
AP2348GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Small Package Outline RDS(ON) 300m Surface Mount Device ID 1.5AG RoHS Compliant & Halogen-FreeSDDescriptionAP2348 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
