AP2346GN Todos los transistores

 

AP2346GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2346GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SOT23
 

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AP2346GN Datasheet (PDF)

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 ap2346gn.pdf pdf_icon

AP2346GN

AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th

 0.1. Size:55K  ape
 ap2346gn-hf.pdf pdf_icon

AP2346GN

AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th

 9.1. Size:57K  ape
 ap2344gen-hf.pdf pdf_icon

AP2346GN

AP2344GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconGprocess technology to achiev

 9.2. Size:61K  ape
 ap2342gk-hf.pdf pdf_icon

AP2346GN

AP2342GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 2S Fast Switching Characteristic ID 590mAD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast swit

MOSTRAR MÁS

Otros transistores... AP2316GN , AP2323AGN , AP2323GN , AP2326GN , AP2328GN , AP2330GN , AP2338GN , AP2344GN , STP75NF75 , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN .

History: APT6029SLL | 10N60G-TF3T-T | PS90N80 | 10N80L-T3P-T | 19N20 | SSW65R190S2 | SUB45N05-20L

 

 
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