AP2309GEN Todos los transistores

 

AP2309GEN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2309GEN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOT23S

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AP2309GEN datasheet

 ..1. Size:148K  ape
 ap2309gen.pdf pdf_icon

AP2309GEN

AP2309GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2309 series are from Advanced Power innovated design and silicon G process technology to achieve the

 0.1. Size:97K  ape
 ap2309gen-hf.pdf pdf_icon

AP2309GEN

AP2309GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4.2A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2309 series are from Advanced Power innovated design and silicon G process technology to achieve

 7.1. Size:72K  ape
 ap2309gn.pdf pdf_icon

AP2309GEN

AP2309GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.7A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effect

 7.2. Size:108K  ape
 ap2309gn-hf.pdf pdf_icon

AP2309GEN

AP2309GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.7A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistanc

MOSTRAR MÁS

Otros transistores... AP2330GN , AP2338GN , AP2344GN , AP2346GN , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , 2SK3878 , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N , AP2P053N , AP3601N .

 

 

 

 

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