AP2309GEN Todos los transistores

 

AP2309GEN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2309GEN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2309GEN Datasheet (PDF)

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 ap2309gen.pdf pdf_icon

AP2309GEN

AP2309GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve the

 0.1. Size:97K  ape
 ap2309gen-hf.pdf pdf_icon

AP2309GEN

AP2309GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve

 7.1. Size:72K  ape
 ap2309gn.pdf pdf_icon

AP2309GEN

AP2309GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance andGcost-effect

 7.2. Size:108K  ape
 ap2309gn-hf.pdf pdf_icon

AP2309GEN

AP2309GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistanc

MOSTRAR MÁS

Otros transistores... AP2330GN , AP2338GN , AP2344GN , AP2346GN , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , IRFP260 , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N , AP2P053N , AP3601N .

History: TF3402 | 2SK1409 | BUK7Y7R2-60E | P2004EV | DH033N04 | AOB2606L | 2SK4075B

 

 
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