AP2321GN Todos los transistores

 

AP2321GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2321GN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23S
     - Selección de transistores por parámetros

 

AP2321GN Datasheet (PDF)

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AP2321GN

AP2321GNHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP2321 series are from Advanced Power innovated design and siliconprocess technology to achieve the low

 ..2. Size:847K  cn vbsemi
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AP2321GN

AP2321GNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

 0.1. Size:55K  ape
ap2321gn-hf.pdf pdf_icon

AP2321GN

AP2321GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2321GN

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

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History: 30N06L-TF3-T | CHM41A2PAGP | IXFX220N17T2 | IRF4104LPBF | VN2110 | SSF65R1K2S2E | IMW120R140M1H

 

 
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