AP2P052N Todos los transistores

 

AP2P052N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2P052N

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOT23S

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AP2P052N datasheet

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AP2P052N

AP2P052N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to achieve the

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AP2P052N

AP2P052Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m D Surface Mount Device ID -5.1A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to ach

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AP2P052N

AP2P053N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achieve th

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ap2p028em.pdf pdf_icon

AP2P052N

AP2P028EM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D D D ESD Diode Protected RDS(ON) 28m D Suit for USB Type-C Application ID -7A G S RoHS Compliant & Halogen-Free HBM ESD 8KV S S SO-8 Description D AP2P028E series are from Advanced Power innovated design and silicon

Otros transistores... AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AO3401 , AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N .

History: MCH6603 | AP2N075EN

 

 

 


History: MCH6603 | AP2N075EN

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