AP3N045EN Todos los transistores

 

AP3N045EN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N045EN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23S
     - Selección de transistores por parámetros

 

AP3N045EN Datasheet (PDF)

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 ap3n045en.pdf pdf_icon

AP3N045EN

AP3N045ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 45m Fast Switching Performance ID 4.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N045 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

 9.1. Size:71K  ape
 ap3n028ey.pdf pdf_icon

AP3N045EN

AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach

 9.2. Size:202K  ape
 ap3n020p.pdf pdf_icon

AP3N045EN

AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de

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 ap3n035n.pdf pdf_icon

AP3N045EN

AP3N035NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N035 series are from Advanced Power innovated design and siliconprocess technology to achieve the

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BR75N75 | FC4B21300L | DMP10H400SK3 | QM3003J | VBQA1402 | VBL1405 | NCEP60T18D

 

 
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