AP2301EN Todos los transistores

 

AP2301EN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2301EN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2301EN Datasheet (PDF)

 ..1. Size:150K  ape
ap2301en.pdf pdf_icon

AP2301EN

AP2301EN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switch

 0.1. Size:96K  ape
ap2301en-hf.pdf pdf_icon

AP2301EN

AP2301EN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switch

 8.1. Size:93K  ape
ap2301agn.pdf pdf_icon

AP2301EN

AP2301AGNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97mD Surface Mount Device ID - 3.3ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

 8.2. Size:56K  ape
ap2301agn-hf.pdf pdf_icon

AP2301EN

AP2301AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,l

Otros transistores... AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N , 4435 , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY .

History: KNY3303A | HUFA76429P3 | AOC2414 | 2SJ601 | STP10NK70ZFP | FTK7N65F | AOB266L

 

 
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