AP9T16AGH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9T16AGH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 12.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 19.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 130 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP9T16AGH MOSFET
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AP9T16AGH datasheet
ap9t16agh.pdf
AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G AP9T16A series are from Advanced Power inn
ap9t16agh-hf.pdf
AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas
ap9t16gh ap9t16gj.pdf
AP9T16GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-252(H) S ruggedized device design, ultr
ap9t18gh-hf.pdf
AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
Otros transistores... AP2N7002KU , AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG , AP9452GG , AO3400A , AP99T03GS , AP99T03GP , AP9992GR , AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH .
History: AP2301EN | CJK3400AH | AP75T10GI | AP10TN135K | FTK80N10P
History: AP2301EN | CJK3400AH | AP75T10GI | AP10TN135K | FTK80N10P
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