AP99T03GS Todos los transistores

 

AP99T03GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP99T03GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 1060 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO263
 

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AP99T03GS Datasheet (PDF)

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AP99T03GS

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

 0.1. Size:91K  ape
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AP99T03GS

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve the

 6.1. Size:94K  ape
 ap99t03gp-hf.pdf pdf_icon

AP99T03GS

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 6.2. Size:195K  ape
 ap99t03gp.pdf pdf_icon

AP99T03GS

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , IRFB31N20D , AP99T03GP , AP9992GR , AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY .

History: H5N60U | C2T213 | C2T225

 

 
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