AP99T03GS Todos los transistores

 

AP99T03GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP99T03GS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 1060 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO263

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AP99T03GS datasheet

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 ap99t03gs.pdf pdf_icon

AP99T03GS

AP99T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve th

 0.1. Size:91K  ape
 ap99t03gs-hf.pdf pdf_icon

AP99T03GS

AP99T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve the

 6.1. Size:94K  ape
 ap99t03gp-hf.pdf pdf_icon

AP99T03GS

AP99T03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 6.2. Size:195K  ape
 ap99t03gp.pdf pdf_icon

AP99T03GS

AP99T03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , IRFB31N20D , AP99T03GP , AP9992GR , AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY .

History: STF12PF06 | AP2530GY

 

 

 

 

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