AP95T10AGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP95T10AGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 277.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Cossⓘ - Capacitancia de salida: 830 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP95T10AGP MOSFET
AP95T10AGP Datasheet (PDF)
ap95t10agp.pdf

AP95T10AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated designand silicon process technology to ach
ap95t10agp-hf.pdf

AP95T10AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan
ap95t10agi-hf.pdf

AP95T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 58AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
ap95t10agw-hf.pdf

AP95T10AGW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fa
Otros transistores... AP9950AGH , AP9938GEY , AP9938GEO , AP9938AGEY , AP9926GEO , AP9923GEO , AP9922GEO , AP97T07AGP , HY1906P , AP95T07BGP , AP9579GJ , AP9467GH , AP9467AGH , AP9410GH , AP9410AGH , AP93T03AGH , AP8N8R0P .
History: GP1M018A020XX | LSD60R1K4HT | SIHF9620S | DHF16N06 | AO4718 | AFP3413A | RU1C001ZP
History: GP1M018A020XX | LSD60R1K4HT | SIHF9620S | DHF16N06 | AO4718 | AFP3413A | RU1C001ZP



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