AP9579GJ Todos los transistores

 

AP9579GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9579GJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 375 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO251

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AP9579GJ datasheet

 ..1. Size:194K  ape
ap9579gj.pdf pdf_icon

AP9579GJ

AP9579GJ-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45A G Halogen Free & RoHS Compliant Product S Description AP9579 series are from Advanced Power innovated design and silicon process technology to achieve the

 0.1. Size:93K  ape
ap9579gj-hf.pdf pdf_icon

AP9579GJ

AP9579GJ-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 7.1. Size:95K  ape
ap9579gp-hf.pdf pdf_icon

AP9579GJ

AP9579GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, r

 7.2. Size:94K  ape
ap9579gs-hf.pdf pdf_icon

AP9579GJ

AP9579GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

Otros transistores... AP9938GEO , AP9938AGEY , AP9926GEO , AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , 60N06 , AP9467GH , AP9467AGH , AP9410GH , AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J .

History: IXFB44N100Q3 | 2SK1299L | 2SK1344 | IXFA180N10T2 | STU417L | NTJD4401N | WSF4042

 

 

 

 

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