AP9579GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9579GJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 89.3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 38 nS
Conductancia de drenaje-sustrato (Cd): 375 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET AP9579GJ
AP9579GJ Datasheet (PDF)
ap9579gj.pdf
AP9579GJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAP9579 series are from Advanced Power innovated design and siliconprocess technology to achieve the
ap9579gj-hf.pdf
AP9579GJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
ap9579gp-hf.pdf
AP9579GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,r
ap9579gs-hf.pdf
AP9579GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
ap9579gm-hf.pdf
AP9579GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VDDD Lower Gate Charge RDS(ON) 25mD Fast Switching Characteristic ID -7.3AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
ap9579gi-hf.pdf
AP9579GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -26.8AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap9579gh-hf.pdf
AP9579GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized
ap9579gp.pdf
Address: 12F-1&2, No.5, Taiyuan 1 ST., Zhubei City, Hsinchu County 30265, Taiwan, R.O.C.Tel:886-3-6215899 Fax:886-3-6215999 ADVANCED POWER ELECTRONICS CORP. E-mail:mail@a-power.com.tw Specification Sheet CustomerCustomer Part Number AP9579GP APEC Part Number AP9579GP Issued Date 2020/06/02SPEC No. SPEC-202006-0001 A
ap9579gm.pdf
AP9579GMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, un
ap9579gp.pdf
AP9579GPwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
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