AP9467AGH Todos los transistores

 

AP9467AGH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9467AGH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 64 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO252

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AP9467AGH datasheet

 ..1. Size:234K  ape
 ap9467agh.pdf pdf_icon

AP9467AGH

AP9467AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant S Description AP9467A series are from Advanced Power innovated design and G D silicon process technology to achieve the

 0.1. Size:143K  ape
 ap9467agh-hf.pdf pdf_icon

AP9467AGH

AP9467AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switch

 6.1. Size:90K  ape
 ap9467agm-hf.pdf pdf_icon

AP9467AGH

AP9467AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.2. Size:94K  ape
 ap9467agmt-hf.pdf pdf_icon

AP9467AGH

AP9467AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 11.5m Low On-resistance ID 38A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast

MOSTRAR MÁS

Otros transistores... AP9926GEO , AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , AP9579GJ , AP9467GH , AO4468 , AP9410GH , AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H .

History: WM02P160R | WMLL020N10HG4 | LSC65R180GT

 

 

 

 

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