AP8N8R0P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP8N8R0P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

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AP8N8R0P Datasheet (PDF)

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ap8n8r0p.pdf

AP8N8R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

7.1. Size:219K ape
ap8n8r0i.pdf

AP8N8R0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 46AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

7.2. Size:160K ape
ap8n8r0mt.pdf

AP8N8R0MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 80VD Simple Drive Requirement RDS(ON) 8m Lower On-resistance ID 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8N8R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

7.3. Size:241K ape
ap8n8r0h.pdf

AP8N8R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated de

7.4. Size:206K ape
ap8n8r0j.pdf

AP8N8R0JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 60AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP8N8R0 seriesare fromAdvanced Power innovated desig

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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