AP85T10AGP Todos los transistores

 

AP85T10AGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP85T10AGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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AP85T10AGP datasheet

 ..1. Size:150K  ape
ap85t10agp.pdf pdf_icon

AP85T10AGP

AP85T10AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100A G RoHS Compliant & Halogen-Free S Description AP85T10A series are from Advanced Power innov

 0.1. Size:95K  ape
ap85t10agp-hf.pdf pdf_icon

AP85T10AGP

AP85T10AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer wi

 5.1. Size:59K  ape
ap85t10agi-hf.pdf pdf_icon

AP85T10AGP

AP85T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer wit

 7.1. Size:59K  ape
ap85t10gp-hf.pdf pdf_icon

AP85T10AGP

AP85T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 125A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugg

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History: 2N65KL-TMS4-T

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