AP85T10AGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP85T10AGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 135 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

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AP85T10AGP Datasheet (PDF)

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ap85t10agp.pdf

AP85T10AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAP85T10A series are from Advanced Power innov

0.1. Size:95K ape
ap85t10agp-hf.pdf

AP85T10AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wi

5.1. Size:59K ape
ap85t10agi-hf.pdf

AP85T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 50AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit

7.1. Size:59K ape
ap85t10gp-hf.pdf

AP85T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 125AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg

7.2. Size:159K ape
ap85t10gp.pdf

AP85T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP85T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowe

7.3. Size:55K ape
ap85t10gr-hf.pdf

AP85T10GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 125AG RoHS Compliant & Halogen-FreeSDescriptionAP85T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

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