AP70WN1K5I Todos los transistores

 

AP70WN1K5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70WN1K5I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AP70WN1K5I Datasheet (PDF)

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 ap70wn1k5i.pdf pdf_icon

AP70WN1K5I

AP70WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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AP70WN1K5I

AP70WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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 ap70wn2k8h.pdf pdf_icon

AP70WN1K5I

AP70WN2K8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 8.2. Size:89K  ape
 ap70wn2k8l.pdf pdf_icon

AP70WN1K5I

AP70WN2K8LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMGD8000LN | HITJ0203MP | SPP80P06PH | IRFPC42R | AP3P010AMT | SIHF9540S | SRC60R075BSD88

 

 
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