AP70WN1K5I Todos los transistores

 

AP70WN1K5I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70WN1K5I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO220F

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AP70WN1K5I datasheet

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 ap70wn1k5i.pdf pdf_icon

AP70WN1K5I

AP70WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 700V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP70WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 5.1. Size:159K  ape
 ap70wn1k5p.pdf pdf_icon

AP70WN1K5I

AP70WN1K5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 700V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP70WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

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 ap70wn2k8h.pdf pdf_icon

AP70WN1K5I

AP70WN2K8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 700V D Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP70WN2K8 series are from the innovated design and silicon G process technology to achieve the lowest possible on

 8.2. Size:89K  ape
 ap70wn2k8l.pdf pdf_icon

AP70WN1K5I

AP70WN2K8L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 700V D Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP70WN2K8 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... AP80SL400AI , AP78T10GP , AP76T03AGMT , AP75T12GI , AP70WN2K8L , AP70WN2K8I , AP70WN2K8H , AP70WN1K5P , STP75NF75 , AP70SL950AJB , AP70SL950AJ , AP70SL950AI , AP70SL950AH , AP70SL500AP , AP70SL500AJB , AP70SL500AI , AP70SL500AH .

History: LSE55R140GT | SIHP120N60E

 

 

 

 

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