IRFI1310N Datasheet. Equivalente

 ..1. Size:238K  international rectifier
 irfi1310npbf.pdf

PD - 94873 IRFI1310NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.036 l Lead-Free G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremel

 ..2. Size:104K  international rectifier
 irfi1310n.pdf

PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.036 Fully Avalanche Rated G Description ID = 24A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-

 ..3. Size:1850K  infineon
 irfi1310npbf.pdf

IRFI1310NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.036 Fully Avalanche Rated Lead-Free ID 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 ..4. Size:222K  inchange semiconductor
 irfi1310n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI1310N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

 6.1. Size:178K  international rectifier
 irfi1310g.pdf

PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.04 Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175 C Operating Temperature ID = 22A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

 9.1. Size:229K  international rectifier
 irfi1010npbf.pdf

PD - 95418 IRFI1010NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.012 l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 9.2. Size:109K  international rectifier
 irfi1010n.pdf

PD - 9.1373A IRFI1010N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.012 Fully Avalanche Rated G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 9.3. Size:201K  inchange semiconductor
 irfi1010n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI1010N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(