AP6N6R5H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP6N6R5H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 68 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 1370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO252

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AP6N6R5H Datasheet (PDF)

..1. Size:241K ape
ap6n6r5h.pdf

AP6N6R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Ultra-low On-resistance RDS(ON) 6.5m Fast Switching Characteristic ID 68AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power inno

7.1. Size:163K ape
ap6n6r5lmt.pdf

AP6N6R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 6.5m Lower On-resistance ID 68AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N6R5L series are from Advanced Power innovated design andsilicon process technology to achieve the

7.2. Size:203K ape
ap6n6r5p.pdf

AP6N6R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6.58m Fast Switching Characteristic ID 68AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power innovated

7.3. Size:219K ape
ap6n6r5i.pdf

AP6N6R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6.5m Fast Switching Characteristic ID 52.7AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N6R5 seriesare fromAdvanced Power innovated

7.4. Size:318K ape
ap6n6r5lmt-l.pdf

AP6N6R5LMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 6.5m Lower On-resistance ID 68AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N6R5L series are from Advanced Power innovated design andsilicon process technology to achieve t

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