AP6N3R8H Todos los transistores

 

AP6N3R8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6N3R8H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 155 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 2480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO252
 

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AP6N3R8H Datasheet (PDF)

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AP6N3R8H

AP6N3R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N3R8 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to

 8.1. Size:183K  ape
ap6n3r5i.pdf pdf_icon

AP6N3R8H

AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda

 8.2. Size:162K  ape
ap6n3r4cmt.pdf pdf_icon

AP6N3R8H

AP6N3R4CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology to

 8.3. Size:335K  ape
ap6n3r7mt.pdf pdf_icon

AP6N3R8H

AP6N3R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 3.7m Ultra Low On-resistance ID4 130A RoHS Compliant & Halogen-Free GDSDDDescriptionDAP6N3R7 series are from Advanced Power innovated design andsilicon process technology to achieve the l

Otros transistores... AP6N8R2ALH , AP6N6R5P , AP6N6R5LMT-L , AP6N6R5LMT , AP6N6R5I , AP6N6R5H , AP6N4R2P , AP6N4R0I , K2611 , AP6N3R7MT-L , AP6N3R7MT , AP6N3R5S , AP6N3R5P , AP6N3R5LIN , AP6N3R5LI , AP6N3R5I , AP6N3R4CMT-L .

History: FDD6696 | 2V7002K | TK12J60U | PD1503BV | AM4407P | DMN313DLT | APT6015JVFR

 

 
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