AP6N3R4CMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N3R4CMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 28.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 60 nS
Cossⓘ - Capacitancia de salida: 2220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Encapsulados: PMPAK5X6
Búsqueda de reemplazo de AP6N3R4CMT MOSFET
- Selecciónⓘ de transistores por parámetros
AP6N3R4CMT datasheet
..1. Size:162K ape
ap6n3r4cmt.pdf 
AP6N3R4CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology to
0.1. Size:318K ape
ap6n3r4cmt-l.pdf
AP6N3R4CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology
8.1. Size:183K ape
ap6n3r5i.pdf
AP6N3R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and a
8.2. Size:205K ape
ap6n3r8h.pdf
AP6N3R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155A G RoHS Compliant & Halogen-Free S Description G AP6N3R8 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to
8.3. Size:335K ape
ap6n3r7mt.pdf
AP6N3R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 3.7m Ultra Low On-resistance ID4 130A RoHS Compliant & Halogen-Free G D S D D Description D AP6N3R7 series are from Advanced Power innovated design and silicon process technology to achieve the l
8.4. Size:206K ape
ap6n3r2p.pdf
AP6N3R2P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R2 seriesare fromAdvanced Power innovated design and
8.5. Size:168K ape
ap6n3r5p.pdf
AP6N3R5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and
8.6. Size:179K ape
ap6n3r5s.pdf
AP6N3R5S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and
8.7. Size:183K ape
ap6n3r5li.pdf
AP6N3R5LI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP6N3R5L series are from AdvancedPower innovated desig
8.8. Size:320K ape
ap6n3r7mt-l.pdf
AP6N3R7MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 3.75m Ultra Low On-resistance RoHS Compliant & Halogen-Free G D S D D Description D AP6N3R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
8.9. Size:218K ape
ap6n3r5lin.pdf
AP6N3R5LIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP6N3R5L series are from AdvancedPower innovated desi
8.10. Size:161K ape
ap6n3r0lmt.pdf
AP6N3R0LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 2.99m Lower On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R0L series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
8.11. Size:205K ape
ap6n3r1lh.pdf
AP6N3R1LH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.1m Low On-resistance ID 100A G G RoHS Compliant & Halogen-Free S S Description G AP4604 series are from Advanced Powerinnovated design AP6N3R1L series are from AdvancedPower innovated design
Otros transistores... AP6N3R7MT-L
, AP6N3R7MT
, AP6N3R5S
, AP6N3R5P
, AP6N3R5LIN
, AP6N3R5LI
, AP6N3R5I
, AP6N3R4CMT-L
, IRFZ46N
, AP6N3R2P
, AP6N3R1LH
, AP6N3R0LMT
, AP6N2R0P
, AP6N2R0I
, AP6N2R0CDT
, AP6N1R7CDT
, AP6N100JV
.
History: STF12N120K5
| FDBL9406F085
| CJE3134K
