AP6N3R1LH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP6N3R1LH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 2550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AP6N3R1LH

AP6N3R1LH Datasheet (PDF)

..1. Size:205K ape
ap6n3r1lh.pdf

AP6N3R1LHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.1m Low On-resistance ID 100AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series are from Advanced Powerinnovated designAP6N3R1L series are from AdvancedPower innovated design

8.1. Size:183K ape
ap6n3r5i.pdf

AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda

8.2. Size:205K ape
ap6n3r8h.pdf

AP6N3R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N3R8 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to

8.3. Size:162K ape
ap6n3r4cmt.pdf

AP6N3R4CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology to

8.4. Size:335K ape
ap6n3r7mt.pdf

AP6N3R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 3.7m Ultra Low On-resistance ID4 130A RoHS Compliant & Halogen-Free GDSDDDescriptionDAP6N3R7 series are from Advanced Power innovated design andsilicon process technology to achieve the l

8.5. Size:206K ape
ap6n3r2p.pdf

AP6N3R2PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R2 seriesare fromAdvanced Power innovated design and

8.6. Size:168K ape
ap6n3r5p.pdf

AP6N3R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design and

8.7. Size:179K ape
ap6n3r5s.pdf

AP6N3R5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design and

8.8. Size:183K ape
ap6n3r5li.pdf

AP6N3R5LIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desig

8.9. Size:320K ape
ap6n3r7mt-l.pdf

AP6N3R7MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 3.75m Ultra Low On-resistance RoHS Compliant & Halogen-Free GDSDDDescriptionDAP6N3R7 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

8.10. Size:218K ape
ap6n3r5lin.pdf

AP6N3R5LINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desi

8.11. Size:161K ape
ap6n3r0lmt.pdf

AP6N3R0LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD Simple Drive Requirement RDS(ON) 2.99m Lower On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R0L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

8.12. Size:318K ape
ap6n3r4cmt-l.pdf

AP6N3R4CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology

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