IRFI460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI460
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 190(max) nC
   trⓘ - Tiempo de subida: 120(max) nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO259AA

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IRFI460 Datasheet (PDF)

..1. Size:211K international rectifier
irfi460.pdf pdf_icon

9.1. Size:290K 1
irfi4019h-117p.pdf pdf_icon

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

9.2. Size:268K 1
irfi4019hg-117p.pdf pdf_icon

PD - 96274IRFI4019HG-117PDIGITAL AUDIO MOSFETFeatures Key Parameters Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by HalfmRDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150 C

9.3. Size:254K 1
irfi4024h-117p.pdf pdf_icon

PD - 97254DIGITAL AUDIO MOSFETIRFI4024H-117PKey Parameters gFeaturesVDS55 V Integrated half-bridge packageRDS(ON) typ. @ 10V m:48 Reduces the part count by halfQg typ.8.9 nC Facilitates better PCB layoutQsw typ.4.3 nC Key parameters optimized for Class-DRG(int) typ. 2.3 audio amplifier applicationsTJ max150 C Low RDS(ON) for improved

9.4. Size:200K 1
irfi4020h-117p.pdf pdf_icon

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

9.5. Size:253K 1
irfi4212h-117p.pdf pdf_icon

PD - 97249ADIGITAL AUDIO MOSFETIRFI4212H-117PFeaturesKey Parameters g Integrated half-bridge packageVDS100 V Reduces the part count by halfRDS(ON) typ. @ 10V m:58 Facilitates better PCB layoutQg typ.12 nC Key parameters optimized for Class-DQsw typ.6.9 nCaudio amplifier applicationsRG(int) typ. 3.4 Low RDS(ON) for improved efficiencyTJ m

9.6. Size:290K international rectifier
irfi4019h-117p.pdf pdf_icon

9.7. Size:315K international rectifier
irfi4410zpbf.pdf pdf_icon

PD - 97475AIRFI4410ZPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 9.3m:l Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

9.8. Size:245K international rectifier
irfi4229pbf.pdf pdf_icon

PD - 97201BIRFI4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max250 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.300 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C32 A and Pass Switch Applications

9.9. Size:285K international rectifier
irfi4321pbf.pdf pdf_icon

PD - 97104IRFI4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12.2m:l Hard Switched and High Frequency Circuitsmax. 16m:Benefitsl Low RDSON Reduces LossesID 34Al Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Recov

9.10. Size:200K international rectifier
irfi4020h-117p.pdf pdf_icon

9.11. Size:290K international rectifier
irfi4227pbf.pdf pdf_icon

PD - 97036BIRFI4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 47 A and Pass Switch Applications

9.12. Size:242K international rectifier
auirfi4905.pdf pdf_icon

PD - 97765AAUTOMOTIVE GRADEAUIRFI4905FeaturesHEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFETD Low On-ResistanceV(BR)DSS-55V Dynamic dV/dT RatingRDS(on) max. 175C Operating Temperature 0.02G Fast SwitchingID-74AS Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

9.13. Size:253K international rectifier
irfi4212h-117p.pdf pdf_icon

9.14. Size:302K international rectifier
irfi4228pbf.pdf pdf_icon

PD - 97228IRFI4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m:12.2 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C61 A and Pass Switch Applicatio

9.15. Size:228K international rectifier
irfi4410zgpbf.pdf pdf_icon

PD - 96372IRFI4410ZGPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9ml Uninterruptible Power Supplyl High Speed Power Switching max. 9.3ml Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

9.16. Size:284K international rectifier
irfi4110gpbf.pdf pdf_icon

PD - 96347IRFI4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max.4.5mID (Silicon Limited)72ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl Fully Characterized

9.17. Size:120K international rectifier
irfi4905.pdf pdf_icon

PD - 9.1526AIRFI4905HEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.02 P-ChannelG Fully Avalanche RatedID = -41ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

9.18. Size:226K international rectifier
irfi4510gpbf.pdf pdf_icon

PD - 97790IRFI4510GPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.10.7ml Uninterruptible Power Supplyl High Speed Power Switching max. 13.5ml Hard Switched and High Frequency CircuitsID 35ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Ava

9.19. Size:582K infineon
irfi4410zpbf.pdf pdf_icon

IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 7.9m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 9.3mID 43A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

9.20. Size:607K infineon
irfi4229pbf.pdf pdf_icon

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

9.21. Size:593K infineon
irfi4321pbf.pdf pdf_icon

IRFI4321PbF HEXFET Power MOSFET Applications VDSS 150V Motion Control Applications High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 12.2m Uninterruptible Power Supply Hard Switched and High Frequency Circuits RDS(on) max. 16mID 34A Benefits Low RDSON Reduces Losses Low Gate Charge Improves the Switching Performance S

9.22. Size:549K infineon
irfi4110gpbf.pdf pdf_icon

IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5mID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

9.23. Size:256K inchange semiconductor
irfi4110g.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110GFEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh speed power switchingHard switch and high frequency circuitsABSOLUTE MAXIMUM RATINGS(

9.24. Size:200K inchange semiconductor
irfi4321.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4321FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

9.25. Size:200K inchange semiconductor
irfi4228.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4228FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

9.26. Size:201K inchange semiconductor
irfi4229.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4229FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

9.27. Size:256K inchange semiconductor
irfi4410z.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFI4410Z,IIRFI4410ZFEATURESLow drain-source on-resistance:RDS(on) 9.3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.28. Size:245K inchange semiconductor
irfi4510g.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510GFEATURESLow drain-source on-resistance:RDS(on) 13.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

9.29. Size:200K inchange semiconductor
irfi4227.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4227FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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