IRFI460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

PD - 96274IRFI4019HG-117PDIGITAL AUDIO MOSFETFeatures Key Parameters Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by HalfmRDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150 C

PD - 97254DIGITAL AUDIO MOSFETIRFI4024H-117PKey Parameters gFeaturesVDS55 V Integrated half-bridge packageRDS(ON) typ. @ 10V m:48 Reduces the part count by halfQg typ.8.9 nC Facilitates better PCB layoutQsw typ.4.3 nC Key parameters optimized for Class-DRG(int) typ. 2.3 audio amplifier applicationsTJ max150 C Low RDS(ON) for improved

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

PD - 97249ADIGITAL AUDIO MOSFETIRFI4212H-117PFeaturesKey Parameters g Integrated half-bridge packageVDS100 V Reduces the part count by halfRDS(ON) typ. @ 10V m:58 Facilitates better PCB layoutQg typ.12 nC Key parameters optimized for Class-DQsw typ.6.9 nCaudio amplifier applicationsRG(int) typ. 3.4 Low RDS(ON) for improved efficiencyTJ m

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

PD - 97475AIRFI4410ZPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 9.3m:l Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

PD - 97201BIRFI4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max250 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.300 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C32 A and Pass Switch Applications

PD - 97104IRFI4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12.2m:l Hard Switched and High Frequency Circuitsmax. 16m:Benefitsl Low RDSON Reduces LossesID 34Al Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Recov

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

PD - 97036BIRFI4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 47 A and Pass Switch Applications

PD - 97765AAUTOMOTIVE GRADEAUIRFI4905FeaturesHEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFETD Low On-ResistanceV(BR)DSS-55V Dynamic dV/dT RatingRDS(on) max. 175C Operating Temperature 0.02G Fast SwitchingID-74AS Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

PD - 97249ADIGITAL AUDIO MOSFETIRFI4212H-117PFeaturesKey Parameters g Integrated half-bridge packageVDS100 V Reduces the part count by halfRDS(ON) typ. @ 10V m:58 Facilitates better PCB layoutQg typ.12 nC Key parameters optimized for Class-DQsw typ.6.9 nCaudio amplifier applicationsRG(int) typ. 3.4 Low RDS(ON) for improved efficiencyTJ m

PD - 97228IRFI4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m:12.2 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C61 A and Pass Switch Applicatio

PD - 96372IRFI4410ZGPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9ml Uninterruptible Power Supplyl High Speed Power Switching max. 9.3ml Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

PD - 96347IRFI4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max.4.5mID (Silicon Limited)72ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl Fully Characterized

PD - 9.1526AIRFI4905HEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.02 P-ChannelG Fully Avalanche RatedID = -41ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

PD - 97790IRFI4510GPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.10.7ml Uninterruptible Power Supplyl High Speed Power Switching max. 13.5ml Hard Switched and High Frequency CircuitsID 35ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Ava

IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 7.9m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 9.3mID 43A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

IRFI4321PbF HEXFET Power MOSFET Applications VDSS 150V Motion Control Applications High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 12.2m Uninterruptible Power Supply Hard Switched and High Frequency Circuits RDS(on) max. 16mID 34A Benefits Low RDSON Reduces Losses Low Gate Charge Improves the Switching Performance S

IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5mID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110GFEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh speed power switchingHard switch and high frequency circuitsABSOLUTE MAXIMUM RATINGS(

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4321FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4228FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4229FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor IRFI4410Z,IIRFI4410ZFEATURESLow drain-source on-resistance:RDS(on) 9.3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510GFEATURESLow drain-source on-resistance:RDS(on) 13.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4227FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T