AP65WN470I Todos los transistores

 

AP65WN470I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65WN470I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
   Paquete / Cubierta: TO220F
 
   - Selección ⓘ de transistores por parámetros

 

AP65WN470I Datasheet (PDF)

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AP65WN470I

AP65WN470IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.47 Fast Switching Characteristic ID3 14AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN470 series are from the innovated design and siliconprocess technology to achieve the lowest possibl

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 ap65wn770i.pdf pdf_icon

AP65WN470I

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 8.2. Size:159K  ape
 ap65wn770p.pdf pdf_icon

AP65WN470I

AP65WN770PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

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 ap65wn2k3i.pdf pdf_icon

AP65WN470I

AP65WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

MOSTRAR MÁS

Otros transistores... AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , IRF540N , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH .

History: NDT452AP | AP20P30Q | KF7N68F

 

 
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