AP65WN2K3I Todos los transistores

 

AP65WN2K3I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65WN2K3I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.29 Ohm

Encapsulados: TO220F

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AP65WN2K3I datasheet

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AP65WN2K3I

AP65WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4A G RoHS Compliant & Halogen-Free S Description AP65WN2K3 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 5.1. Size:91K  ape
ap65wn2k3l.pdf pdf_icon

AP65WN2K3I

AP65WN2K3L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4A G RoHS Compliant & Halogen-Free S Description AP65WN2K3 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 5.2. Size:198K  ape
ap65wn2k3h.pdf pdf_icon

AP65WN2K3I

AP65WN2K3H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.3 Simple Drive Requirement ID3 4A G RoHS Compliant & Halogen-Free S Description AP65WN2K3 series are from Advanced Power innovated design and G silicon process technology to achieve the lo

 8.1. Size:175K  ape
ap65wn770i.pdf pdf_icon

AP65WN2K3I

AP65WN770I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-

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