AP65WN2K3H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65WN2K3H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: TO252
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AP65WN2K3H Datasheet (PDF)
ap65wn2k3h.pdf

AP65WN2K3HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.3 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andGsilicon process technology to achieve the lo
ap65wn2k3i.pdf

AP65WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap65wn2k3l.pdf

AP65WN2K3LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap65wn770i.pdf

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
Otros transistores... AP6923GMT , AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , IRFZ44 , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AP65SL600AIN .
History: IRF3710ZG | HM2319 | PTA15N50 | SQJ433EP | AFP4535 | LSD60R380HT | HCU60R260
History: IRF3710ZG | HM2319 | PTA15N50 | SQJ433EP | AFP4535 | LSD60R380HT | HCU60R260



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