AP65WN1K5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65WN1K5I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 44 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO220F
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AP65WN1K5I Datasheet (PDF)
ap65wn1k5i.pdf

AP65WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn1k5s.pdf

AP65WN1K5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn1k0i.pdf

AP65WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-resi
ap65wn770i.pdf

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
Otros transistores... AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , IRF1404 , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AP65SL600AIN , AP65SL600AI , AP65SL600AH .
History: TPU60R840C | SQD50N30-4M0L | PM555BZ
History: TPU60R840C | SQD50N30-4M0L | PM555BZ



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