AP65SL600DH Todos los transistores

 

AP65SL600DH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL600DH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO252

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AP65SL600DH datasheet

 ..1. Size:237K  ape
 ap65sl600dh.pdf pdf_icon

AP65SL600DH

AP65SL600DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description AP65SL600D series are from Advanced Power innovated design and G D silicon process technology to achieve t

 4.1. Size:214K  ape
 ap65sl600di.pdf pdf_icon

AP65SL600DH

AP65SL600DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600D series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 5.1. Size:215K  ape
 ap65sl600ai.pdf pdf_icon

AP65SL600DH

AP65SL600AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve

 5.2. Size:237K  ape
 ap65sl600ah.pdf pdf_icon

AP65SL600DH

AP65SL600AH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and G silicon process technology to achie

MOSTRAR MÁS

Otros transistores... AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , IRF640N , AP65SL600AR , AP65SL600AJ , AP65SL600AIN , AP65SL600AI , AP65SL600AH , AP65SL380DI , AP65SL380DH , AP65SL380BR .

History: BUK9Y4R8-60E

 

 

 

 

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