AP65SL190DR Todos los transistores

 

AP65SL190DR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL190DR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO262
 

 Búsqueda de reemplazo de AP65SL190DR MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP65SL190DR Datasheet (PDF)

 ..1. Size:108K  ape
 ap65sl190dr.pdf pdf_icon

AP65SL190DR

AP65SL190DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible

 4.1. Size:201K  ape
 ap65sl190dp.pdf pdf_icon

AP65SL190DR

AP65SL190DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the

 4.2. Size:202K  ape
 ap65sl190dwl.pdf pdf_icon

AP65SL190DR

AP65SL190DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible

 4.3. Size:217K  ape
 ap65sl190di.pdf pdf_icon

AP65SL190DR

AP65SL190DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP65SL380DH , AP65SL380BR , AP65SL380BI , AP65SL380AIN , AP65SL380AI , AP65SL380AH , AP65SL210AFI , AP65SL190DWL , IRLZ44N , AP65SL190DP , AP65SL190DI , AP65SL190AWL , AP65SL190AR , AP65SL190AP , AP65SL190AIN , AP65SL190AI , AP65SL145AFI .

History: 2N6756JAN | CED6601 | DMP3085LSD | STB70NF03LT4 | DH400P06D | 2N6758JAN | FSS9130R

 

 
Back to Top

 


 
.