AP65SL190DR Todos los transistores

 

AP65SL190DR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL190DR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO262

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AP65SL190DR datasheet

 ..1. Size:108K  ape
ap65sl190dr.pdf pdf_icon

AP65SL190DR

AP65SL190DR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

 4.1. Size:201K  ape
ap65sl190dp.pdf pdf_icon

AP65SL190DR

AP65SL190DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the

 4.2. Size:202K  ape
ap65sl190dwl.pdf pdf_icon

AP65SL190DR

AP65SL190DWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

 4.3. Size:217K  ape
ap65sl190di.pdf pdf_icon

AP65SL190DR

AP65SL190DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the

Otros transistores... AP65SL380DH , AP65SL380BR , AP65SL380BI , AP65SL380AIN , AP65SL380AI , AP65SL380AH , AP65SL210AFI , AP65SL190DWL , AON7408 , AP65SL190DP , AP65SL190DI , AP65SL190AWL , AP65SL190AR , AP65SL190AP , AP65SL190AIN , AP65SL190AI , AP65SL145AFI .

 

 

 


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