AP65SL190AWL Todos los transistores

 

AP65SL190AWL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL190AWL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO247
 

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AP65SL190AWL Datasheet (PDF)

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AP65SL190AWL

AP65SL190AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achi

 4.1. Size:166K  ape
ap65sl190ap.pdf pdf_icon

AP65SL190AWL

AP65SL190APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achie

 4.2. Size:256K  ape
ap65sl190ain.pdf pdf_icon

AP65SL190AWL

AP65SL190AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ac

 4.3. Size:219K  ape
ap65sl190ai.pdf pdf_icon

AP65SL190AWL

AP65SL190AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ach

Otros transistores... AP65SL380AIN , AP65SL380AI , AP65SL380AH , AP65SL210AFI , AP65SL190DWL , AP65SL190DR , AP65SL190DP , AP65SL190DI , K4145 , AP65SL190AR , AP65SL190AP , AP65SL190AIN , AP65SL190AI , AP65SL145AFI , AP65SL130DP , AP65SL130DI , AP65SL130AWL .

History: PMV16UN | IRLH6224PBF | IRFS832 | ELM16400EA | NCE65N460 | CSD17578Q5A | FDR8305N

 

 
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