AP65SL190AR Todos los transistores

 

AP65SL190AR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL190AR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO262

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AP65SL190AR datasheet

 ..1. Size:169K  ape
ap65sl190ar.pdf pdf_icon

AP65SL190AR

AP65SL190AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achieve the l

 4.1. Size:201K  ape
ap65sl190awl.pdf pdf_icon

AP65SL190AR

AP65SL190AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achi

 4.2. Size:166K  ape
ap65sl190ap.pdf pdf_icon

AP65SL190AR

AP65SL190AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achie

 4.3. Size:256K  ape
ap65sl190ain.pdf pdf_icon

AP65SL190AR

AP65SL190AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to ac

Otros transistores... AP65SL380AI, AP65SL380AH, AP65SL210AFI, AP65SL190DWL, AP65SL190DR, AP65SL190DP, AP65SL190DI, AP65SL190AWL, IRF9540N, AP65SL190AP, AP65SL190AIN, AP65SL190AI, AP65SL145AFI, AP65SL130DP, AP65SL130DI, AP65SL130AWL, AP65SL130AR

 

 

 


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