AP65SL130DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP65SL130DP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 88 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO220

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AP65SL130DP Datasheet (PDF)

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ap65sl130dp.pdf

AP65SL130DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

4.1. Size:218K ape
ap65sl130di.pdf

AP65SL130DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

5.1. Size:169K ape
ap65sl130ar.pdf

AP65SL130ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achieve the

5.2. Size:221K ape
ap65sl130ai.pdf

AP65SL130AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to a

5.3. Size:205K ape
ap65sl130awl.pdf

AP65SL130AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to ac

5.4. Size:166K ape
ap65sl130ap.pdf

AP65SL130APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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