AP65SL130DP Todos los transistores

 

AP65SL130DP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL130DP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO220

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AP65SL130DP datasheet

 ..1. Size:202K  ape
ap65sl130dp.pdf pdf_icon

AP65SL130DP

AP65SL130DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t

 4.1. Size:218K  ape
ap65sl130di.pdf pdf_icon

AP65SL130DP

AP65SL130DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t

 5.1. Size:169K  ape
ap65sl130ar.pdf pdf_icon

AP65SL130DP

AP65SL130AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achieve the

 5.2. Size:221K  ape
ap65sl130ai.pdf pdf_icon

AP65SL130DP

AP65SL130AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to a

Otros transistores... AP65SL190DP, AP65SL190DI, AP65SL190AWL, AP65SL190AR, AP65SL190AP, AP65SL190AIN, AP65SL190AI, AP65SL145AFI, IRFP260, AP65SL130DI, AP65SL130AWL, AP65SL130AR, AP65SL130AP, AP65SL130AI, AP65SL105AFWL, AP65SL105AFS, AP65SL099DWL

 

 

 


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