AP65SL130DI Todos los transistores

 

AP65SL130DI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL130DI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO220F
 

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AP65SL130DI Datasheet (PDF)

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AP65SL130DI

AP65SL130DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

 4.1. Size:202K  ape
 ap65sl130dp.pdf pdf_icon

AP65SL130DI

AP65SL130DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t

 5.1. Size:169K  ape
 ap65sl130ar.pdf pdf_icon

AP65SL130DI

AP65SL130ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achieve the

 5.2. Size:221K  ape
 ap65sl130ai.pdf pdf_icon

AP65SL130DI

AP65SL130AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to a

MOSTRAR MÁS

Otros transistores... AP65SL190DI , AP65SL190AWL , AP65SL190AR , AP65SL190AP , AP65SL190AIN , AP65SL190AI , AP65SL145AFI , AP65SL130DP , 2SK3568 , AP65SL130AWL , AP65SL130AR , AP65SL130AP , AP65SL130AI , AP65SL105AFWL , AP65SL105AFS , AP65SL099DWL , AP65SL099DR .

History: IXFN26N120P | STD10PF06-1 | CEDM7001VL | PM557BA | CED12N10L | IRFPE30PBF | SI8810

 

 
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