AP65SL130AP Todos los transistores

 

AP65SL130AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL130AP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO220

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AP65SL130AP datasheet

 ..1. Size:166K  ape
ap65sl130ap.pdf pdf_icon

AP65SL130AP

AP65SL130AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achi

 4.1. Size:169K  ape
ap65sl130ar.pdf pdf_icon

AP65SL130AP

AP65SL130AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achieve the

 4.2. Size:221K  ape
ap65sl130ai.pdf pdf_icon

AP65SL130AP

AP65SL130AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to a

 4.3. Size:205K  ape
ap65sl130awl.pdf pdf_icon

AP65SL130AP

AP65SL130AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to ac

Otros transistores... AP65SL190AP, AP65SL190AIN, AP65SL190AI, AP65SL145AFI, AP65SL130DP, AP65SL130DI, AP65SL130AWL, AP65SL130AR, K4145, AP65SL130AI, AP65SL105AFWL, AP65SL105AFS, AP65SL099DWL, AP65SL099DR, AP65SL099DI, AP65SL099AWL, AP65SL099AS

 

 

 


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