AP65SL099DI Todos los transistores

 

AP65SL099DI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL099DI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm

Encapsulados: TO220F

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AP65SL099DI datasheet

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ap65sl099di.pdf pdf_icon

AP65SL099DI

AP65SL099DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3,4 38A G RoHS Compliant & Halogen-Free S Description AP65SL099D series are from Advanced Power innovated design and silicon process technology to achieve the

 4.1. Size:242K  ape
ap65sl099dwl.pdf pdf_icon

AP65SL099DI

AP65SL099DWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099D series are from Advanced Power innovated design and silicon process technology to achieve the l

 4.2. Size:206K  ape
ap65sl099dr.pdf pdf_icon

AP65SL099DI

AP65SL099DR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

 5.1. Size:214K  ape
ap65sl099as.pdf pdf_icon

AP65SL099DI

AP65SL099AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099A series are from Advanced Power innovated design and silicon process technology to achieve the lo

Otros transistores... AP65SL130AWL, AP65SL130AR, AP65SL130AP, AP65SL130AI, AP65SL105AFWL, AP65SL105AFS, AP65SL099DWL, AP65SL099DR, IRFB3607, AP65SL099AWL, AP65SL099AS, AP65SL045AFWL, AP65SL041AWL, AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H

 

 

 


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