AP65PN2R6H Todos los transistores

 

AP65PN2R6H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65PN2R6H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm

Encapsulados: TO252

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AP65PN2R6H datasheet

 ..1. Size:198K  ape
 ap65pn2r6h.pdf pdf_icon

AP65PN2R6H

AP65PN2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and G silicon process technology to achieve the

 5.1. Size:212K  ape
 ap65pn2r6i.pdf pdf_icon

AP65PN2R6H

AP65PN2R6I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

 5.2. Size:91K  ape
 ap65pn2r6l.pdf pdf_icon

AP65PN2R6H

AP65PN2R6L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

 5.3. Size:65K  ape
 ap65pn2r6p.pdf pdf_icon

AP65PN2R6H

AP65PN2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP65SL099DI, AP65SL099AWL, AP65SL099AS, AP65SL045AFWL, AP65SL041AWL, AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, TK10A60D, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, AP60WN650I, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I

 

 

 

 

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