AP60WN4K9H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP60WN4K9H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 19 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.9 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP60WN4K9H MOSFET
- Selecciónⓘ de transistores por parámetros
AP60WN4K9H datasheet
ap60wn4k9h.pdf
AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on
ap60wn4k9i.pdf
AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
ap60wn4k9j.pdf
AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
ap60wn4k9k.pdf
AP60WN4K9K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S D Description S AP60WN4K9 series are from the innovated design and silicon D process technology to achieve the lowest possi
Otros transistores... AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, AP60WN650I, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I, RFP50N06, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H, AP60WN2K1J, AP60WN2K1I, AP60WN2K1H, AP60WN1K5J
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