IRFI540N Todos los transistores

 

IRFI540N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI540N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 62.7 nC

Resistencia drenaje-fuente RDS(on): 0.052 Ohm

Empaquetado / Estuche: TO220

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IRFI540N Datasheet (PDF)

1.1. irfi540npbf.pdf Size:262K _international_rectifier

IRFI540N
IRFI540N

PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052Ω l Fully Avalanche Rated G l Lead-Free ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

1.2. irfi540n.pdf Size:131K _international_rectifier

IRFI540N
IRFI540N

PD - 9.1361A PRELIMINARY IRFI540N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052? Fully Avalanche Rated G ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

 3.1. irfi540g irfi540gpbf.pdf Size:1475K _upd

IRFI540N
IRFI540N

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (Ω)VGS = 10 V 0.077 f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 11 • Dynamic dV/dt Rating Qgd (nC) 32 • Low T

3.2. irfi540g.pdf Size:175K _international_rectifier

IRFI540N
IRFI540N

 3.3. irfi540gpbf.pdf Size:2156K _international_rectifier

IRFI540N
IRFI540N

PD - 94942 IRFI540GPbF Lead-Free 1/13/04 Document Number: 91144 www.vishay.com 1 IRFI540GPbF Document Number: 91144 www.vishay.com 2 IRFI540GPbF Document Number: 91144 www.vishay.com 3 IRFI540GPbF Document Number: 91144 www.vishay.com 4 IRFI540GPbF Document Number: 91144 www.vishay.com 5 IRFI540GPbF Document Number: 91144 www.vishay.com 6 IRFI540GPbF TO-220 Full-Pak P

3.4. irfi540g sihfi540g.pdf Size:1473K _vishay

IRFI540N
IRFI540N

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (?)VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal Resistance

Otros transistores... IRFI4905 , IRFI510A , IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFB4227 , IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFI624G .

 

 
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