AP60SL280AI Todos los transistores

 

AP60SL280AI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60SL280AI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET AP60SL280AI

 

Principales características: AP60SL280AI

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AP60SL280AI

AP60SL280AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic VDS @ Tj,max. 650V D Simple Drive Requirement RDS(ON) 0.28 RoHS Compliant & Halogen-Free ID3,4 13.5A G S Description AP60SL280A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib

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ap60sl280ain.pdf pdf_icon

AP60SL280AI

AP60SL280AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID3,4 13.5A G RoHS Compliant & Halogen-Free S Description AP60SL280A series are from Advanced Power innovated design and silicon process technology to

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AP60SL280AI

AP60SL280DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID3,4 13.5A G RoHS Compliant & Halogen-Free S Description AP60SL280D series are from Advanced Power innovated design and silicon process technology to achieve t

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AP60SL280AI

AP60SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description G AP60SL600A series are from Advanced Power innovated design and D S TO-251(J) silicon process t

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