AP60SL150AR Todos los transistores

 

AP60SL150AR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60SL150AR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO262
 

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AP60SL150AR Datasheet (PDF)

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 ap60sl150ar.pdf pdf_icon

AP60SL150AR

AP60SL150ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 4.1. Size:204K  ape
 ap60sl150ap.pdf pdf_icon

AP60SL150AR

AP60SL150APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 4.2. Size:220K  ape
 ap60sl150ai.pdf pdf_icon

AP60SL150AR

AP60SL150AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap60sl115ai.pdf pdf_icon

AP60SL150AR

AP60SL115AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.115 Simple Drive Requirement ID3,4 28AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL115A series are from Advanced Power innovated designand silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP60SL600AIN , AP60SL600AI , AP60SL600AH , AP60SL380AH , AP60SL300AFI , AP60SL280DI , AP60SL280AIN , AP60SL280AI , MMD60R360PRH , AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P .

History: NP82N04MDG | VBJ1101M | RFP15N15 | RJK0601DPN-E0 | 2SK417 | NTMFS4899NFT1G | 2SK4058-ZK-E1-AY

 

 
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