AP60SL115AI Todos los transistores

 

AP60SL115AI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60SL115AI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO220F
 

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AP60SL115AI Datasheet (PDF)

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AP60SL115AI

AP60SL115AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.115 Simple Drive Requirement ID3,4 28AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL115A series are from Advanced Power innovated designand silicon process technology to achieve th

 7.1. Size:209K  ape
ap60sl150ar.pdf pdf_icon

AP60SL115AI

AP60SL150ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 7.2. Size:204K  ape
ap60sl150ap.pdf pdf_icon

AP60SL115AI

AP60SL150APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the l

 7.3. Size:220K  ape
ap60sl150ai.pdf pdf_icon

AP60SL115AI

AP60SL150AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL150A series are from Advanced Power innovated designand silicon process technology to achieve the

Otros transistores... AP60SL380AH , AP60SL300AFI , AP60SL280DI , AP60SL280AIN , AP60SL280AI , AP60SL150AR , AP60SL150AP , AP60SL150AI , AO3407 , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI .

History: PHD9NQ20T | FHU2N60A | LNC06R230

 

 
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