AP55T10GP Todos los transistores

 

AP55T10GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T10GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

AP55T10GP Datasheet (PDF)

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 ap55t10gp.pdf pdf_icon

AP55T10GP

AP55T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 16.5m Lower Gate Charge Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power innova

 0.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GP

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.1. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GP

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 6.2. Size:162K  ape
 ap55t10gi.pdf pdf_icon

AP55T10GP

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6800SM | BLM05N03-D

 

 
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