AP50WN270W Todos los transistores

 

AP50WN270W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50WN270W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO3P
 

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AP50WN270W datasheet

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AP50WN270W

AP50WN270W Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on-

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ap50wn270i.pdf pdf_icon

AP50WN270W

AP50WN270I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on-

 5.2. Size:212K  ape
ap50wn270in.pdf pdf_icon

AP50WN270W

AP50WN270IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on

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ap50wn520p.pdf pdf_icon

AP50WN270W

AP50WN520P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12A G RoHS Compliant & Halogen-Free S Description AP50WN520 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

Otros transistores... AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , IRF1404 , AP50WN270IN , AP50WN270I , AP50WN1K5P , AP50WN1K5I , AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS .

 

 
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