AP4P016P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4P016P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 285 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: TO220
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AP4P016P datasheet
ap4p016p.pdf
AP4P016P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possibl
ap4p016i.pdf
AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib
ap4p016h.pdf
AP4P016H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description G AP4P016 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes
ap4p013les.pdf
AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe
Otros transistores... AP50T10GJ, AP50T10GI, AP50T10GH, AP50T10AGI, AP50SL290DH, AP50PN520R, AP4P052J, AP4P052H, AON7408, AP4P016I, AP4P016H, AP4P013LES, AP4P013LEP, AP4P012LEH, AP4N4R2H, AP4N3R6P, AP4N3R6H
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