AP4P013LES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4P013LES
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 128 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: TO263

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AP4P013LES Datasheet (PDF)

..1. Size:176K ape
ap4p013les.pdf

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

5.1. Size:164K ape
ap4p013lep.pdf

AP4P013LEPHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

8.1. Size:204K ape
ap4p012leh.pdf

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the

8.2. Size:179K ape
ap4p016i.pdf

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib

8.3. Size:205K ape
ap4p016h.pdf

AP4P016HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P016 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

8.4. Size:185K ape
ap4p018m.pdf

AP4P018MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -40V Fast Switching Characteristic RDS(ON) 18m Simple Drive Requirement ID3 -9.4AG RoHS Compliant & Halogen-FreeSDescriptionDDAP4P018 series are from Advanced Power innovated design and siliconDDprocess technology to achieve th

8.5. Size:72K ape
ap4p016p.pdf

AP4P016PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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