AP4804MT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4804MT 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.13 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
Encapsulados: PMPAK5X6
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AP4804MT datasheet
ap4804mt.pdf
AP4804MT Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 12.5m G1 Converter Application ID 36A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40V RDS(ON) 8m G2 Description ID 55A S2 AP4804 series are from Advanced Power G2 innovated des
ap4800gm.pdf
AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of
ap4800dgm-hf.pdf
AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
ap4800gyt-hf.pdf
AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis
Otros transistores... AP4N2R6P, AP4N2R6MT, AP4N2R6J, AP4N2R6H, AP4N2R6AMT, AP4N1R8CMT-A, AP4N1R1CDT-A, AP4820AGYT, AON6380, AP4800N2, AP4618CDT, AP4610P, AP4608S, AP4608P, AP4606P, AP4604P, AP4604IN
History: UTT20P04 | PZ509BA | SI5902BDC
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