AP4453GYT Todos los transistores

 

AP4453GYT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4453GYT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 9.5 nS
   Cossⓘ - Capacitancia de salida: 305 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: PMPAK3X3

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AP4453GYT Datasheet (PDF)

 ..1. Size:150K  1
ap4453gyt.pdf

AP4453GYT
AP4453GYT

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 ..2. Size:150K  ape
ap4453gyt.pdf

AP4453GYT
AP4453GYT

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 0.1. Size:118K  ape
ap4453gyt-hf.pdf

AP4453GYT
AP4453GYT

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 8.1. Size:94K  ape
ap4453agyt-hf.pdf

AP4453GYT
AP4453GYT

AP4453AGYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAP4453A series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible o

 8.2. Size:205K  ape
ap4453h.pdf

AP4453GYT
AP4453GYT

AP4453HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4453 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the lo

 8.3. Size:182K  ape
ap4453m.pdf

AP4453GYT
AP4453GYT

AP4453MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 13m Fast Switching Characteristic ID -11.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP4453 series are from Advanced Power innovated design and siliconprocess technology

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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